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| EFE960BVR-5759 UPDATED 10/26/2006 5.70-5.90GHz 4-Watt Partially Matched Power FET FEATURES * * * * * * * 5.70-5.90 GHz Bandwidth +36.0 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at Po = 24.5 dBm SCL Non-Hermetic 180 Mil Metal Flange Package 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB PAE Id1dB IM3 IDSS VP RTH Notes: Caution! ESD sensitive device. MIN 35.0 8.0 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression VDS = 10 V, IDSQ 1100mA Gain at 1dB Compression VDS = 10 V, IDSQ 1100mA f = 5.8GHz f = 5.8GHz TYP 36.0 9.0 25 1300 MAX UNITS dBm dB % Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 1100mA f = 5.8GHz Drain Current at 1dB Compression f = 5.8GHz Output 3rd Order Intermodulation Distortion 2 f = 10 MHz 2-Tone Test; Pout = 24.5 dBm S.C.L VDS = 10 V, IDSQ 65% IDSS f = 5.8GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 1400 mA dBc -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA mA V o C/W 1. FET TO BE TESTED IN EXCELICS EVALUATION BOARD. 2. S.C.L. = Single Carrier Level. 3. OVERALL Rth DEPENDS ON CASE MOUNTING. DATA REFERS TO EDGES OF PACKAGE. MAXIMUM RATINGS AT 25OC SYMBOLS VDS VGS Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reversed Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15V -5V 43.2 mA -7.2 mA 33 dBm o 175 C CONTINUOUS2 10V -4.5V 14.4 mA -2.4 mA @ 3dB Compression 175oC -65/175oC 25W -65/175 C 25W o Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH -TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) - (POUT - PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 EFE960BVR-5759 UPDATED 10/26/2006 5.70-5.90GHz 4-Watt Partially Matched Power FET TEST CIRCUITS Evaluation Board Schematic (VDS = 10 V, IDSQ 1100mA) -Vg C5 +Vd C6 C3 R1 C4 T2 T4 T6 T9 T1 RF IN C1 T3 T8 C2 T10 RF OUT T5 T7 C1, C2: 8.2 pF chip capacitor C3, C4: 1000 pF chip capacitor C5, C6: 1 uF chip capacitor R1: 50 chip resistor Evaluation Board (should be mounted on appropriate heatsink) PCB MATERIAL: FR4 THICKNESS: 0.031 INCH Er: 4.6 C5 C3 R1 Vg Vd C6 C4 1.00 C1 C2 Excelics 086-101417-01 1.45 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 EFE960BVR-5759 UPDATED 10/26/2006 5.70-5.90GHz 4-Watt Partially Matched Power FET S-PARAMETERS VDS = 10 V, IDSQ 1100mA FREQ (GHz) --- S11 --MAG ANG --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 7.4 7.6 7.8 8.0 0.914 0.899 0.881 0.864 0.834 0.796 0.745 0.674 0.579 0.464 0.383 0.442 0.563 0.680 0.769 0.815 0.855 0.883 0.899 0.909 0.917 153.5 149.7 145.0 139.8 134.1 127.8 121.4 115.1 110.0 110.3 123.0 142.2 148.8 146.7 141.0 135.4 130.0 124.9 120.3 116.0 111.2 1.242 1.308 1.388 1.486 1.594 1.725 1.892 2.076 2.272 2.432 2.490 2.368 2.171 1.890 1.623 1.387 1.224 1.080 0.944 0.854 0.762 8.8 2.2 -4.9 -12.7 -21.3 -31.2 -41.9 -54.0 -68.5 -85.5 -104.4 -122.7 -142.4 -159.6 -174.5 173.7 163.1 152.2 142.8 133.7 124.8 0.024 0.025 0.026 0.030 0.032 0.034 0.039 0.043 0.047 0.052 0.055 0.055 0.053 0.051 0.047 0.044 0.044 0.044 0.044 0.045 0.046 -26.2 -32.7 -39.2 -49.6 -60.2 -72.4 -83.4 -98.6 -116.3 -136.0 -161.4 176.1 150.2 129.3 107.9 90.2 77.1 63.9 51.1 40.4 31.0 0.647 0.650 0.652 0.663 0.677 0.697 0.726 0.769 0.818 0.864 0.892 0.896 0.861 0.804 0.740 0.698 0.662 0.634 0.608 0.594 0.583 173.9 171.8 169.5 166.6 163.5 160.0 156.5 152.0 146.4 139.3 130.9 125.7 115.8 106.7 99.2 92.6 85.1 77.5 69.3 61.4 53.6 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 |
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